Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer

IEEE Photonics Technology Letters

Volumn 20, Issue 14, 2008, Pages 1255-1257

  Lin, J C ^a   Su, Y K ^b   Chang, S J ^b   Lan, W H ^c   Chen, W R ^d   Huang, K C ^e   Cheng, Y C ^a   Lin, W J ^a  

^a CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^d NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Interlayer; Low temperature (LT); P i n; Photodetectors (PDs)

Indexed keywords

ALN; HIGH POTENTIAL; LOW TEMPERATURES; P-I-N PHOTODETECTORS; REJECTION RATIOS; RESPONSIVITY; REVERSE BIAS; ULTRA-VIOLET;

GALLIUM ALLOYS; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

GALLIUM NITRIDE;

EID: 77951714154     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.926021     Document Type: Article

References (16)

1. E. Monroy, E. Muñoz, F. J. Sánchez, F. Calle, E. Calleja, B. Beaumont, P. Gibart, J. A. Muñoz, and F. Cussó, "High-performance GaN p-n junction photodetectors for solar ultraviolet applications," Semicond. Sci. Technol., vol.13, pp. 1042-1046, Jun. 1998.
2. C. K. Wang, T. K. Ko, C. S. Chang, S. J. Chang, Y. K. Su, T. C. Wen, C. H. Kuo, and Y. Z. Chiou, "The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors," IEEE Photon. Technol. Lett., vol.17, no.10, pp. 2161-2163, Oct. 2005.
3. N. Biyikli, I. Kimukin, O. Aytur, and E. Ozbay, "Solar-blind AlGaNbased p-i-n photodiodes with low dark current and high detectivity," IEEE Photon. Technol. Lett., vol.16, no.7, pp. 1718-1720, Jul. 2004.
4. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. A. Khan, D. Kuksenkov, and H. Temkin, "Low noise p-π-n GaN ultraviolet photodetectors," Appl. Phys. Lett., vol.71, pp. 2334-2336, 1997.
5. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, "GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes," IEEE Sensors J., vol.2, no.4, pp. 366-371, Aug. 2002.
6. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, "GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts," IEEE Photon. Technol. Lett., vol.13, no.8, pp. 848-850, Aug. 2001.
7. J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, "GaN avalanche photodiodes," Appl. Phys. Lett., vol.76, no.7, pp. 924-926, Feb. 14, 2000.
8. S. Verghese, K. A. McIntosh, R. J. Molnar, L. J. Mahoney, R. L. Aggarwal, M. W. Geis, K. M. Molvar, E. K. Duerr, and I. Melngailis, "GaN avalanche photodiodes operating in linear-gain mode and Geiger mode," IEEE Trans. Electron Devices, vol.48, no.3, pp. 502-511, Mar. 2001.
9. G. Parish, S.Keller, P.Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa, "Highperformance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN," Appl. Phys. Lett., vol.75, pp. 247-249, 1999.
10. M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano, and I. Akasaki, "Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN," Jpn. J. Appl. Phys., vol.37, pp. L316-L318, 1998.
11. H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Floro, E. Chason, and J. Figiel, "Stress and defect control in GaN using low temperature interlayers," Jpn. J. Appl. Phys., vol.37, pp. L1540-L1542, 1998.
12. J. F. Wang, D. Z. Yao, J. Chen, J. J. Zhu, D. G. Zhao, D. S. Jiang, H. Yang, and J. W. Liang, "Strain evolution in GaN layers grown on hightemperature AlN interlayers," Appl. Phys. Lett., vol.89, p. 152105, 2006.
13. S. J. Chang, C. L. Yu, P. C. Chang, and Y. C. Lin, "GaN ultraviolet photodetector with a low-temperature AlN cap layer," Electrochem. Solid-State Lett., vol.10, pp. H196-H198, 2007.
14. P. C. Chang, C. L.Yu, S. J. Chang, Y. C. Lin, and S. L.Wu, "Low-Noise and high-detectivity GaN UV photodiodes with a low-temperature aln cap layer," IEEE Sensors J., vol.7, no.9, pp. 1289-1292, Sep. 2007.
15. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, C. Y. Huang, W. R. Chen, Y. C. Cheng, W. J. Lin, and W. C. Lai, "High responsivity of GaN p-i-n photodiode by using low-temperature interlayer," Appl. Phys. Lett., vol.91, p. 173502, 2007.
16. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, "Valence-band discontinuities of wurtzite gan, aln, and inn heterojunctions measured by X-ray photoemission spectroscopy," Appl. Phys. Lett., vol.68, no.18, pp. 2541-2543, Apr. 29, 1996.