Planar GaN p-i-n photodiodes with n+-conductive channel formed by Si implantation

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Chen, M C ^a   Sheu, J K ^b   Lee, M L ^c   Kao, C J ^a   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; ION IMPLANTATION; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; VAPOR PHASE EPITAXY;

CUTOFF WAVELENGTHS; DARK CURRENT DENSITY; REJECTION RATIO; SPECTRA RESPONSE;

PHOTODIODES;

EID: 33646863311     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2206687     Document Type: Article

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