Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2400-2404

  Leung, Bong Hung ^a,b   Fong, Wai Keung ^b   Zhu, Chang Fei ^b   Surya, Charles ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Gallium nitride; Intermediate temperature buffer layer; Low frequency noise

Indexed keywords

HOOGE PARAMETERS; INTERMEDIATE-TEMPERATURE BUFFER LAYER; RESIDUAL STRAIN;

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SPURIOUS SIGNAL NOISE; SURFACES;

THIN FILMS;

EID: 0035471244     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954483     Document Type: Article

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