Nitride-based flip-chip p-i-n photodiodes

IEEE Transactions on Advanced Packaging

Volumn 29, Issue 3, 2006, Pages 483-487

  Ko, T K ^a   Chang, S J ^a   Su, Y K ^a   Chiou, Y Z ^b   Chang, C S ^a   Shei, S C ^c   Sheu, J K ^a   Lai, W C ^a   Lin, Y C ^a   Chen, W S ^a   Shen, C F ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Band pass; Flip chip; GaN; p i n; Photodiodes

Indexed keywords

FLIP CHIP DEVICES; NITRIDES; PHOTODETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

NITRIDE-BASED FLIP-CHIP P-I-N PHOTODIODES; OPTICAL SIGNALS; PEAK RESPONSIVITY;

PHOTODIODES;

EID: 33747605576     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2006.875072     Document Type: Article

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