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Volumn 157, Issue 6, 2010, Pages

GaN schottky barrier photodetectors prepared on patterned sapphire substrate

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; DETECTIVITY; HIGH QUALITY; NOISE EQUIVALENT POWER; PATTERNED SAPPHIRE SUBSTRATE; RESPONSIVITY; SAPPHIRE SUBSTRATES; SCHOTTKY BARRIERS;

EID: 77958592674     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3374339     Document Type: Article
Times cited : (7)

References (26)
  • 14
    • 18644380689 scopus 로고    scopus 로고
    • Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes
    • DOI 10.1063/1.1861113, 052103
    • J. K. Sheu, M. L. Lee, and W. C. Lai, Appl. Phys. Lett. APPLAB 0003-6951, 86, 052103 (2005). 10.1063/1.1861113 (Pubitemid 40661680)
    • (2005) Applied Physics Letters , vol.86 , Issue.5 , pp. 1-3
    • Sheu, J.K.1    Lee, M.L.2    Lai, W.C.3
  • 22
    • 0343982041 scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.97359
    • S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. APPLAB 0003-6951, 49, 85 (1986). 10.1063/1.97359
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 85
    • Cheung, S.K.1    Cheung, N.W.2
  • 24
    • 0034506710 scopus 로고    scopus 로고
    • Low-noise metal-insulator-semiconductor UV photodiodes based on GaN
    • DOI 10.1049/el:20001441
    • E. Monroy, F. Calle, E. Munoz, F. Omnes, P. Gibart, and J. A. Munoz, Electron. Lett. ELLEAK 0013-5194, 36, 2096 (2000). 10.1049/el:20001441 (Pubitemid 32075167)
    • (2000) Electronics Letters , vol.36 , Issue.25 , pp. 2096-2098
    • Monroy, E.1    Calle, F.2    Pau, J.L.3    Munoz, E.4    Omnes, F.5
  • 26
    • 0013237162 scopus 로고
    • JAPIAU 0021-8979,. 10.1063/1.352243
    • S. R. Morrison, J. Appl. Phys. JAPIAU 0021-8979, 72, 4104 (1992). 10.1063/1.352243
    • (1992) J. Appl. Phys. , vol.72 , pp. 4104
    • Morrison, S.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.