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Volumn 54, Issue 4, 2007, Pages 671-676

Characteristics of MBE-Grown GaN detectors on double buffer layers under high-power ultraviolet optical irradiation

Author keywords

Device degradation; GaN; Low frequency noise; Molecular beam epitaxy; Radiation hardness; Ultraviolet photo detectors

Indexed keywords

OPTOELECTRONIC DEVICES; RADIATION HARDENING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET RADIATION;

EID: 34147152126     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.892361     Document Type: Article
Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.