Activation energies (Ea) of failure mechanisms in advanced NAND flash cells for different generations and cycling

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 1099-1107

  Lee, Kyunghwan ^a   Kang, Myounggon ^a   Seo, Seongjun ^a   Kang, Duckseoung ^a   Kim, Shinhyung ^b   Li, Dong Hua ^b   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Activation energy (Ea); detrapping mechanism; failure mechanism; interface trap recovery; NAND Flash; P E cycling; retention time (tR); trap assisted tunneling (TAT)

Indexed keywords

DETRAPPING MECHANISM; FAILURE MECHANISM; INTERFACE TRAPS; NAND FLASH; RETENTION TIME; TRAP ASSISTED TUNNELING;

ACTIVATION ENERGY; NAND CIRCUITS; TESTING;

FAILURE (MECHANICAL);

EID: 84874635725     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2241065     Document Type: Article

References (26)

1. M. Kang, W. Hahn, I.-H. Park, J. Park, Y. Song, H. Lee, C. Eun, S. Ju, K. Choi, Y. Lim, S. Jang, S. Cho, C. Eun, S. Ju, K. Choi, Y. Lim, S. Jang, S. Cho, B.-G. Park, and H. Shin, "DIBL-Induced program disturb characteristics in 32-nm NAND flash memory array," IEEE Trans. Electron Devices, vol. 58, no. 10, pp. 3626-3629, Oct. 2011.
2. M. Kang, K. Lee, D. H. Chae, B.-G. Park, and H. Shin, "The compact modeling of channel potential in sub-30-nm NAND flash cell string," IEEE Electron Device Lett., vol. 33, no. 3, pp. 321-323, Mar. 2012.
3. C. G. Hwang, "Nanotechnology enables a new memory growth model," Proc. IEEE, vol. 91, no. 11, pp. 1765-1771, Nov. 2003.
4. B. You, J. S. Park, S. D. Lee, G. Baek, J. H. Lee, M. Kim, J. Kim, H. Chung, E. Jang, and T. Y. Kim, "A high performance co-design of 26 nm 64 Gb MLC NAND flash memory using the dedicated NAND flash controller," J. Semicond. Technol. Sci., vol. 11, no. 2, pp. 121-129, Jun. 2011.
5. B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, P. Candelier, and G. Reimbold, "A new extrapolation law for data-retention time-tofailure of nonvolatile memories," IEEE Electron Device Lett., vol. 20, no. 5, pp. 197-199, May 1999.
6. B. Govoreanu and J. V. Houdt, "On the Roll-off of the activation energy plot in high-temperature flash memory retention tests and its impact on the reliability assessment," IEEE Electron Device Lett., vol. 29, no. 2, pp. 177-179, Feb. 2008. (Pubitemid 351280074)
7. K. Lee, M. Kang, S. Seo, D. H. Li, J. Kim, and H. Shin, "Analysis of failure mechanisms and extraction of activation energies (EA) in 21-nm NAND flash cells," IEEE Electron Device Lett., vol. 34, no. 1, pp. 48-50, Jan. 2013.
8. Z. Xia, D. S. Kim, N. Jeong, Y.-G. Kim, J.-H. Kim, K.-H. Lee, Y.-K. Park, and C. Chung, "Comprehensive modeling of NAND flash memory reliability: Endurance and data retention," in Proc. Int. Reliability Physics Symp., 2012, pp. MY.5.1-MY.5.4.
9. N. Mielke, H. Belgal, I. Kalastirsky, P. Kalavade, A. Kurtz, Q. Meng, N. Righos, and J. Wu, "Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling," IEEE Trans. Device Mater. Rel., vol. 4, no. 3, pp. 335-344, Sep. 2004.
10. B. Govoreanu, D. Wellekens, L. Haspeslagh, J. De Vos, and J. V. Van Houdt, "Investigation of the low-field leakage through high-k interpoly dielectric stacks and its impact on nonvolatile memory data retention," in IEDM Tech. Dig., 2006, pp. 1-4.
11. J.-D. Lee, J.-H. Choi, D. Park, and K. Kim, "Degradation of tunnel oxide by fn current stress and its effects on data retention characteristics of 90-nm NAND flash memory cells," in Proc. Int. Reliab. Phys. Symp., 2003, pp. 497-501.
12. M. Makabe, T. Kubota, and T. Kitano, "Bias-temperature degradation of pMOSFETs: Mechanism and suppression," in Proc. Int. Reliab. Phys. Symp., 2000, pp. 205-209.
13. S. Mahapatra, P. B. Kumar, and M. A. Alam, "Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETs," IEEE Trans. Electron Devices, vol. 51, no. 9, pp. 1371-1379, Sep. 2004.
14. S. Rangan, N. Mielke, and E. C. C. Yeh, "Universal recovery behavior of negative bias temperature instability," in IEDM Tech. Dig., 2003, pp. 14.3.1-14.3.4.
15. D. A. Baglee, "Characteristics & reliability of 100 Å oxides," in Proc. Int. Reliab. Phys. Symp., 1984, pp. 152-155.
16. K. Wu, C.-S. Pan, J. J. Shaw, P. Freiberger, and G. Sery, "A model for eprom intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric," in Proc. Int. Reliab. Phys. Symp., 1990, pp. 145-149.
17. R. E. Shiner, J. M. Caywood, and B. L. Euzent, "Data retention in EPROMS," in Proc. Int. Reliab. Phys. Symp., 1980, pp. 238-243.
18. Failure Mechanisms and Models for Semiconductor Devices, Standard JEP122E, Mar. 2009.
19. C. Miccoli, C. M. Compagnoni, S. Beltrami, A. S. Spinelli, and A. Visconti, "Threshold-voltage instability due to damage recovery in nanoscale NAND flash memories," IEEE Trans. Electron Devices, vol. 58, no. 8, pp. 2406-2414, Aug. 2011.
20. D. J. DiMaria and E. Cartier, "Mechanism for stress-induced leakage currents in thin silicon dioxide films," Appl. Phys. Lett., vol. 78, no. 6, pp. 3883-3894, Sep. 1995.
21. G. Bersuker, D. Heh, C. D. Young, L. Morassi, A. Padovani, L. Larcher, K. S. Yew, Y. C. Ong, D. S. Ang, K. L. Pey, and W. Taylor, "Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer," in Proc. Int. Reliab. Phys. Symp., 2010, pp. 373-378.
22. P. Riess, G. Ghibaudo, G. Pananakakis, J. Brini, and G. Ghidini, "Electric field and temperature dependence of the stress induced leakage current: Fowler-Nordheim or Schottky emission?" J. Non-Cryst. Solids, vol. 245, no. 1, pp. 48-53, Apr. 1999.
23. S. Aritome, R. Shirota, G. Hemink, T. Endoh, and F. Masuoka, "Reliability issues of flash memory cells," Proc. IEEE, vol. 81, no. 5, pp. 776-788, May 1993. (Pubitemid 23695270)
24. K. Cheng, J.-P. Leburton, K. Hess, and J. W. Lyding, "On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect-transistors," Appl. Phys. Lett., vol. 79, no. 6, pp. 863-865, Aug. 2001. (Pubitemid 33598463)
25. T. Grasser, W. Gos, V. Sverdlov, and B. Kaczer, "The universality of NBTI relaxation and its implications for modeling and characterization," in Proc. Int. Reliab. Phys. Symp., 2007, pp. 268-280. (Pubitemid 47431952)
26. T. Ajiki, M. Sugimoto, H. Higuchi, and S. Kumada, "Temperature accelerated estimation of MNOS memory reliability," in Proc. Int. Reliab. Phys. Symp., 1981, pp. 17-22. (Pubitemid 12455990)