Analysis of failure mechanisms and extraction of activation energies (Ea) in 21-nm nand flash cells

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 48-50

  Lee, Kyunghwan ^a   Kang, Myounggon ^a   Seo, Seongjun ^a   Li, Dong Hua ^b   Kim, Jungki ^b   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Activation energy (E a ); detrapping mechanism; failure mechanism; interface trap; nand Flash; program erase (P E) cycling; retention time; trap assisted tunneling (TAT)

Indexed keywords

DETRAPPING MECHANISM; FAILURE MECHANISM; INTERFACE TRAPS; NAND FLASH; PROGRAM/ERASE; RETENTION TIME; TRAP ASSISTED TUNNELING;

ACTIVATION ENERGY; NAND CIRCUITS;

FAILURE (MECHANICAL);

EID: 84871797452     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2222013     Document Type: Article

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