DIBL-induced program disturb characteristics in 32-nm NAND flash memory array

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3626-3629

  Kang, Myounggon ^a,b   Hahn, Wookghee ^b   Park, Il Han ^b   Park, Juyoung ^b   Song, Youngsun ^b   Lee, Hocheol ^b   Eun, Changgyu ^b   Ju, Sanghyun ^b   Choi, Kihwan ^b   Lim, Youngho ^b   Jang, Seunghyun ^a   Cho, Seongjae ^c   Park, Byung Gook ^c   Shin, Hyungcheol ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Stanford University   (United States)

Author keywords

Cell to cell interference; drain induced barrier lowering (DIBL); gate induced drain leakage (GIDL); hot carrier injection (HCI); nand string

Indexed keywords

COUPLING EFFECT; CUT-OFF; DRAIN-INDUCED BARRIER LOWERING; GATE-INDUCED DRAIN LEAKAGE; HIGH-DENSITY; HOT CARRIER INJECTION; MEMORY ARRAY; NAND FLASH MEMORY; NAND STRING;

CELLS; ELECTRIC CURRENTS; NAND CIRCUITS;

FLASH MEMORY;

EID: 80053208901     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2161313     Document Type: Article

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