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Volumn 11, Issue 2, 2011, Pages 121-129

A high performance co-design of 26 nm 64 Gb MLC NAND flash memory using the dedicated NAND flash controller

Author keywords

Controller; Cycling; Disturbance; Interference; Moving read; NAND FLASH memory; ONFI; Randomization; Retention; SiP; SoC; Virtual negative read

Indexed keywords

CYCLING; DISTURBANCE; MOVING READ; NAND FLASH MEMORY; ONFI; RANDOMIZATION; RETENTION; SIP; SOC; VIRTUAL NEGATIVE READ;

EID: 79960263957     PISSN: 15981657     EISSN: None     Source Type: Journal    
DOI: 10.5573/JSTS.2011.11.2.121     Document Type: Article
Times cited : (13)

References (3)
  • 1
    • 63449104097 scopus 로고    scopus 로고
    • Novel Co-Design of NAND Flash Memory and NAND Flash ControllerCircuits for Sub-30 nm Low-Power High-SpeedSolid-State Drives (SSD)
    • K. Takeuchi, et al, "Novel Co-Design of NAND Flash Memory and NAND Flash ControllerCircuits for Sub-30 nm Low-Power High-SpeedSolid-State Drives (SSD)," IEEE J. Solid-Stat e Circuits, Vol.44, pp.1227-1234, 2009.
    • (2009) IEEE J. Solid-Stat E Circuits , vol.44 , pp. 1227-1234
    • Takeuchi, K.1
  • 2
    • 77952147387 scopus 로고    scopus 로고
    • A 32Gb MLC NAND Flash Memory with Vth Endurance Enhancing Schemesin 32 nm CMOS
    • Section 24
    • Changhyuk Lee, et al, "A 32Gb MLC NAND Flash Memory with Vth Endurance Enhancing Schemesin 32 nm CMOS," IEEE. Solid-State CircuitsConference, section 24, pp.446-448, 2010.
    • (2010) IEEE. Solid-State CircuitsConference , pp. 446-448
    • Lee, C.1
  • 3
    • 70349994423 scopus 로고    scopus 로고
    • NAND Flash Scaling beyond 20 nm
    • Memory Workshop, 2009. IMW '09
    • Yohwan Koh, et al, "NAND Flash Scaling beyond 20 nm," Memory Workshop, 2009. IMW '09. IEEEInternational, pp.1-3, 2009.
    • (2009) IEEEInternational , pp. 1-3
    • Koh, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.