Comprehensive modeling of NAND flash memory reliability: Endurance and data retention

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Xia, Zhiliang ^a   Kim, Dae Sin ^a   Jeong, Narae ^a   Kim, Young Gu ^a   Kim, Jae Ho ^a   Lee, Keun Ho ^a   Park, Young Kwan ^a   Chung, Chilhee ^a   Lee, Hwan ^a   Han, Jungin ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Data Retention; Degradation; Endurance; Flash Reliability; Oxide Quality

Indexed keywords

AFTER HIGH TEMPERATURE; COMPREHENSIVE MODELING; DATA RETENTION; DOMINANT MECHANISM; FLOATING GATE FLASH MEMORY; LOW TEMPERATURES; NAND FLASH MEMORY; POOLE-FRENKEL MODEL; PROCESS EFFECTS; QUALITY DISTRIBUTION; RELIABILITY MODELING; THERMAL EMISSIONS; THRESHOLD VOLTAGE DISTRIBUTION; TRAP EFFECT; TRAP GENERATION; TUNNELING CURRENT; TUNNELING OXIDES;

COMPUTER SIMULATION; DEGRADATION; DURABILITY; ELECTRIC FIELDS; FLASH MEMORY; THRESHOLD VOLTAGE;

RELIABILITY;

EID: 84866616065     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241922     Document Type: Conference Paper

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