Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

Journal of Applied Physics

Volumn 113, Issue 7, 2013, Pages

  Mikhelashvili, V ^a   Meyler, B ^a   Shneider, Y ^a   Yofis, S ^a   Salzman, J ^a   Atiya, G ^a   Cohen Hyams, T ^a   Ankonina, G ^a   Kaplan, W D ^a   Lisiansky, M ^b   Roizin, Y ^b   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TowerJazz   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD BANDS; CAPACITANCE VOLTAGE CHARACTERISTIC; DIELECTRIC STACK; HIGH-K DIELECTRIC; MEMORY CELL; NEAR INFRARED; NON-VOLATILE MEMORIES; PHOTO DETECTION; PLASMONIC; PLATINUM NANO-PARTICLES; PROGRAMMING VOLTAGE; SILICON-ON-INSULATOR SUBSTRATES; SPECTRAL RESPONSE; VOLTAGE SWEEP; WIDE HYSTERESIS;

DIELECTRIC MATERIALS; HAFNIUM OXIDES; HYSTERESIS; NANOPARTICLES; PLATINUM; SILICON; SILICON ON INSULATOR TECHNOLOGY;

SILICON OXIDES;

EID: 84874622631     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4791761     Document Type: Article

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