Metal nanocrystal memory with Pt single- and dual-layer NC with low-leakage Al2O3 blocking dielectric

IEEE Electron Device Letters

Volumn 29, Issue 12, 2008, Pages 1389-1391

  Singh, Pawan K ^a   Bisht, Gaurav ^a   Hofmann, Ralf ^b   Singh, Kaushal ^b   Krishna, Nety ^b   Mahapatra, Souvik ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Dual layer (DL); Flash memory; Metal nano crystal (NC)

Indexed keywords

DATA STORAGE EQUIPMENT; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; PLATINUM; PLATINUM METALS; SEMICONDUCTOR STORAGE; SONOLUMINESCENCE; WINDOWS;

COMPATIBLE PROCESSES; DUAL LAYER (DL); FLASH MEMORY DEVICES; HIGH TEMPERATURES; MEMORY WINDOWS; METAL NANOCRYSTAL MEMORIES; METAL NANOCRYSTALS; PRECYCLING; SINGLE LAYERS; STORAGE ELEMENTS; STORED CHARGES;

FLASH MEMORY;

EID: 57049083963     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2007308     Document Type: Article

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