Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1375-1384

  Zhang, Weiquan ^b   Chan, Mansun ^a,b   Ko, Ping K ^a,b  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; ELECTRON HOLE; OPTICAL CURRENT; TRANSIENT RESPONSE;

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); PHOTOCURRENTS; PHOTODETECTORS; POLYSILANES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS;

MOSFET DEVICES;

EID: 0034229894     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848280     Document Type: Article

References (16)

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