High-frequency integrated point-of-load converters: Overview

IEEE Transactions on Power Electronics

Volumn 28, Issue 9, 2013, Pages 4127-4136

  Lee, Fred C ^a   Li, Qiang ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

Gallium nitride (GaN) technology; integration; magnetic materials; point of load (POL) converter; semiconductor device

Indexed keywords

CURRENT LEVELS; DEVICE PACKAGING; DEVICE TECHNOLOGIES; FREQUENCY RANGES; GALLIUM NITRIDES (GAN); HIGH FREQUENCY HF; INDUSTRY PRODUCTS; INTEGRATION LEVELS; INTEGRATION METHOD; INTEGRATION TECHNOLOGIES; LOW TEMPERATURE CO-FIRED CERAMICS; LOW-PROFILE; MAGNETIC COMPONENTS; MAGNETIC INTEGRATION; MAGNETIC INTEGRATION TECHNIQUE; MOS-FET; PACKAGE LEVELS; POINT-OF-LOAD CONVERTERS; POWER DENSITIES; STATE-OF-THE-ART TECHNOLOGY; THREE DIMENSIONAL INTEGRATION; TRENCH MOSFET; WAFER LEVEL;

CHIP SCALE PACKAGES; ELECTRIC LOADS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETIC DEVICES; MAGNETIC MATERIALS; MICROELECTRONICS; MOSFET DEVICES; SEMICONDUCTOR DEVICES; TECHNOLOGY;

INTEGRATION;

EID: 84874598986     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2238954     Document Type: Review

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