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EN63A0QI-12 Amp High Efficiency Buck Converter with Integrated Inductor
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LTM4601A Data Sheet
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A 2nd generation micro DC-DC converter
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LMZ10500-650mA SIMPLE SWITCHER® Nano Module with 5.5V Maximum Input Voltage
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System design of a 3D integrated non-isolated Point of Load converter
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A class of ceramic-based chip inductors for hybrid integration in power supplies
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New substrate for micro DC-DC converter
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Three level buck converter with control and soft startup
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High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse
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Ikeda, N.; Kaya, S.; Jiang Li; Sato, Y.; Kato, S.; Yoshida, S.;, "High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse," Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on, vol., no., pp.287-290, 18-22 May 2008
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Gallium nitride based multi-megahertz high density 3D point of load module
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System in package with mounted capacitor for reduced parasitic inductance in voltage regulators
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27744601909
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Multi chip module with minimum parasitic inductance for new generation voltage regulator
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A method to determine parasitic inductances in buck converter topologies
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High frequency LTCC planar inductor substrate design and evaluation for integrated DC/DC converter with gan device
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