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Volumn 13, Issue SPL. ISS.2, 2012, Pages

The effects of high-energy electron beam irradiation on the properties of IGZO thin films prepared by rf magnetron sputtering

Author keywords

Hall measurements; High energy electron beam irradiation (HEEBI); Indium gallium zinc oxide (IGZO) films; Photoluminescence; Radio frequency (rf) magnetron sputtering; X ray photoelectron spectroscopy

Indexed keywords


EID: 84874204509     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (19)

References (28)
  • 8
    • 82455171930 scopus 로고    scopus 로고
    • Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing
    • doi: 10. 1016/j. mssp. (2011. 02. 012.)
    • S.-J. Jeon, J.-W. Chang, K.-S. Choi, J. P. Kar, T.-I. Lee, J.-M. Myoung, Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing. Mat. Sci. Semicond. Process. (2011), doi: 10. 1016/j. mssp. (2011. 02. 012.).
    • (2011) Mat. Sci. Semicond. Process
    • Jeon, S.-J.1    Chang, J.-W.2    Choi, K.-S.3    Kar, J.P.4    Lee, T.-I.5    Myoung, J.-M.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.