Device characteristics of amorphous indium gallium zinc oxide thin film transistors with ammonia incorporation

Solid-State Electronics

Volumn 61, Issue 1, 2011, Pages 96-99

  Huang, Sheng Yao ^a   Chang, Ting Chang ^a,b   Chen, Min Chen ^a   Tsao, Shu Wei ^a   Chen, Shih Ching ^a   Tsai, Chih Tsung ^a   Lo, Hung Ping ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Ammonia (NH3); Indium gallium zinc oxide (IGZO); Thin film transistors (TFTs)

Indexed keywords

AMMONIA GAS; DEPOSITION PROCESS; DEVICE CHARACTERISTICS; ELECTRICAL PERFORMANCE; HYSTERESIS PHENOMENON; INDIUM GALLIUM ZINC OXIDES; O-H BOND; SUBTHRESHOLD SWING; THIN FILM TRANSISTORS (TFTS);

AMMONIA; AMORPHOUS FILMS; DANGLING BONDS; GALLIUM; PASSIVATION; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

INDIUM;

EID: 79955641937     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.01.001     Document Type: Article

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