Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 3017-3021

  Kikuchi, Yutomo ^a   Nomura, Kenji ^b   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a,b   Hirano, Masahiro ^b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

a IGZO; Amorphous oxide semiconductor; Low temperature annealing; Thin film transistor

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; ANNEALING TEMPERATURES; DEPOSITION METHODS; DEVICE CHARACTERISTICS; DEW POINTS; LOW TEMPERATURE ANNEALING; LOW-TEMPERATURE PROCESS; NEGATIVE V; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SPUTTERED FILMS;

AMORPHOUS FILMS; MAGNETRON SPUTTERING; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; ZINC;

ANNEALING;

EID: 77649093833     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.132     Document Type: Article

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