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Volumn 205, Issue 21-22, 2011, Pages 5130-5134

Characterization of the properties of high-energy electron irradiated Al-doped ZnO thin films prepared by rf magnetron sputtering using Ar plasma

Author keywords

AZO; Electron beam irradiation effects; Luminescence; Photoelectron spectroscopies; Thin films

Indexed keywords

AL-DOPED ZNO; AR PLASMAS; ARGON PLASMAS; ATOMIC FORCE MICROSCOPES; AZO; AZO FILMS; ELECTRON BEAM IRRADIATION EFFECTS; ELECTRON CONCENTRATION; FLUENCES; GRAIN SIZE; HIGH ENERGY ELECTRON BEAM IRRADIATION; HIGH QUALITY; HIGH-ENERGY ELECTRON; INTERSTITIALS; N-TYPE CONDUCTIVITY; PHOTOLUMINESCENCE MEASUREMENTS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPE; ZINC VACANCY;

EID: 79959525037     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.05.021     Document Type: Article
Times cited : (13)

References (30)
  • 28
    • 79959500314 scopus 로고    scopus 로고
    • NIST XPS Database, Selected Element Search Result;
    • NIST XPS Database, Selected Element Search Result; http://srdata.nist.gov/xps.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.