Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1079-1081

  Cho, Deok Yong ^a   Song, Jaewon ^a   Hwang, Cheol Seong ^a   Choi, Woo Seok ^b   Noh, T W ^b   Kim, J Y ^c   Lee, H G ^c   Park, B G ^c   Cho, S Y ^b   Oh, S J ^b   Jeong, Jong Han ^d   Jeong, Jae Kyeong ^e   Mo, Yeon Gon ^d  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

^d Samsung SDI   (South Korea)

^e Inha University   (South Korea)

Author keywords

InGaZnO; Transparent conducting oxide; X ray absorption spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

BAND GAPS; CHEMICAL STATE; CONDUCTION BAND EDGE; O K-EDGES; OXYGEN GAS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; TRANSPARENT CONDUCTING OXIDE; ZNO; ZNO FILMS;

ABSORPTION SPECTROSCOPY; AMORPHOUS SEMICONDUCTORS; CONDUCTION BANDS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GAS ABSORPTION; HETEROJUNCTIONS; OXYGEN; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; X RAY ABSORPTION; X RAY ABSORPTION SPECTROSCOPY; X RAYS; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71649105231     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.156     Document Type: Article

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