Electrical and optical properties of a GaN n+-p junction with high-energy electron irradiation

Journal of the Korean Physical Society

Volumn 50, Issue 6, 2007, Pages 1904-1907

  Lee, Dong Uk ^a   Kim, Eun Kyu ^a   Lee, Byung Cheol ^b   Oh, Dae Kon ^c  

^a Hanyang University   (South Korea)

^b Korea Atomic Energy Research Institute   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Diode; DLTS; Electron irradiation; GaN

Indexed keywords

EID: 34547240154     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.50.1904     Document Type: Article

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