Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Materials Science in Semiconductor Processing

Volumn 13, Issue 5-6, 2010, Pages 320-324

  Jeon, Sang Jin ^a,b   Chang, Jong Woong ^a   Choi, Kwang Soo ^a   Kar, Jyoti Prakash ^b   Lee, Tae Il ^b   Myoung, Jae Min ^b  

^a SAMSUNG Electronics   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Annealing; Electrical characterization; IGZO; TFT

Indexed keywords

ACTIVE CHANNELS; ANNEALING TEMPERATURES; CHANNEL LENGTH; COMPOSITIONAL VARIATION; CURRENT RATIOS; DC SPUTTERING; ELECTRICAL CHARACTERIZATION; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; IGZO; LOW-TEMPERATURE THERMAL ANNEALING; METAL PAD; NITROGEN AMBIENT; TFT; THERMAL-ANNEALING;

ANNEALING; GALLIUM; INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SILICON COMPOUNDS; THIN FILMS; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 82455171930     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.02.012     Document Type: Article

References (24)

1. H.H. Hsieh, and C.C. Wu Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes Appl Phys Lett 91 2007 013502
2. 2 treatment Electrochem Solid State Lett 7 2004 G279
3. R.B.M. Cross, M.M. De Souza, S.C. Deane, and N.D. Yougn A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators IEEE Trans Electron Devices 55 2008 1109
4. W. Lim, J.H. Jang, S.H. Kim, D.P. Norton, V. Craciun, and S.J. Pearton High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates Appl Phys Lett 93 2008 082102
5. x passivation layer Electrochem Solid State Lett 12 2009 H348
6. B.Y. Oh, M.C. Jeong, M.H. Ham, and J.M. Myoung Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors Semicond Sci Technol 22 2007 608
7. x etch stopper Appl Phys Lett 90 2007 212114
8. A. Suresh, and J.F. Muth Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors Appl Phys Lett 92 2008 033502
9. 4 thin-film transistors on paper Appl Phys Lett 94 2009 072103
10. H.S. Bae, and S. Im ZnO-based thin-film transistors of optimal device performance J Vac Sci Technol B 22 2004 1191
11. J.S. Park, J.K. Jeong, Y.G. Mo, and H.D. Kim Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment Appl Phys Lett 90 2007 262106
12. D.H. Cho, S.H. Yang, J.H. Shin, C.W. Byun, M.K. Ryu, and J.I. Lee Passivation of bottom-gate IGZO thin film transistors J Korean Phys Soc 54 2009 531
13. K. Nomura, T. Kamiya, M. Hirano, and H. Hosono Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors Appl Phys Lett 95 2009 013502
14. G.H. Kim, H.S. Kim, H.S. Shin, B.D. Ahn, K.H. Kim, and H.J. Kim Inkjet-printed InGaZnO thin film transistor Thin Solid Films 517 2009 4007
15. K.W. Lee, H.S. Shin, K.Y. Heo, K.M. Kim, and H.J. Kim Light effects of the amorphous indium gallium zinc oxide thin-film transistor J Inf Disp 10 2009 171
16. H.S. Shin, B.D. Ahn, K.H. Kim, J.S. Park, and H.J. Kim The effect of thermal annealing sequence on amorphous InGaZnO thin film transistor with a plasma-treated source-drain structure Thin Solid Films 517 2009 6349
17. D.Y. Cho, J. Song, Y.C. Shin, C.S. Hwang, W.S. Choi, and J.K. Jeong Influence of high temperature postdeposition annealing on the atomic configuration in amorphous InGaZnO films Electrochem Solid State Lett 12 2009 H208
18. K. Remashan, D.K. Hwang, S.J. Park, and J.H. Jang Effect of rapid thermal annealing on the electrical characteristics of ZnO thin-film transistors Jpn J Appl Phys 47 2008 2848
19. V.P. Verma, D.H. Kim, H. Jeon, M. Jeon, and W. Choi Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum Thin Solid Films 516 2008 8736
20. Jeong S, Ha YG, Moon J, Facchetti A, Marks TJ. Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors. Adv Mater 2010;26:1346
21. C. Jung, D. Kim, Y.K. Kang, and D.H. Yoon Effect of heat treatment on electrical properties of amorphous oxide semiconductor InGaZnO film as a function of oxygen flow rate. Jpn J Appl Phys 48 2009 08HK02.
22. K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, and K. Kobayashi Subgap states in transparent amorphous oxide semiconductor, InGaZnO, observed by bulk sensitive x-ray photoelectron spectroscopy Appl Phys Lett 92 2008 202117
23. C.K. Chen, H.H. Hsieh, J.J. Shyue, and C.C. Wu The influence of channel compositions on the electrical properties of solution-processed indium-zinc oxide thin-film transistors J Disp Technol 5 2009 509
24. H.H. Hsieh, C.H. Wu, C.W. Chien, C.K. Chen, C.S. Yang, and C.C. Wu Influence of channel-deposition conditions and gate insulators on performance and stability of top-gate IGZO transparent thin-film transistors J Sid 18 2010 796