Effects of O2 fraction on the properties of Al-doped ZnO thin films treated by high-energy electron beam irradiation

Journal of Alloys and Compounds

Volumn 496, Issue 1-2, 2010, Pages 543-547

  Yun, Eui Jung ^a   Jung, Jin Woo ^a   Lee, Byung Cheol ^b  

^a Hoseo University   (South Korea)

^b Korea Atomic Energy Research Institute   (South Korea)

Author keywords

AZO thin films; Electron beam irradiation effects; Luminescence; O2 fraction; Photoelectron spectroscopies

Indexed keywords

AL-DOPED ZNO; ATOMIC FORCE MICROSCOPES; AZO FILMS; AZO THIN FILMS; CHANNEL LAYERS; CRYSTALLINITIES; ELECTRON BEAM IRRADIATION; ELECTRON BEAM IRRADIATION EFFECTS; GRAIN SIZE; HIGH ENERGY ELECTRON BEAM IRRADIATION; INTERSTITIALS; N-TYPE CONDUCTIVITY; OXYGEN ATOM; P-TYPE CONDUCTIVITY; PHOTOLUMINESCENCE MEASUREMENTS; PROPERTIES OF AL; RADIO FREQUENCY MAGNETRON SPUTTERING; TRANSPARENT THIN FILM TRANSISTOR; ZINC VACANCY;

ALUMINUM; ELECTRON BEAMS; ELECTRONS; HIGH ENERGY PHYSICS; IRRADIATION; LIGHT; LUMINESCENCE; OPTICAL FILMS; OXYGEN; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SINGLE CRYSTAL SURFACES; THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

FILM PREPARATION;

EID: 77950867412     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.02.097     Document Type: Article

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