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Applied Surface Science

Volumn 245, Issue 1-4, 2005, Pages 414-419

Characteristics and luminescence of Ge doped ZnO films prepared by alternate radio frequency magnetron sputtering

(3) Fan, D H a Ning, Z Y a Jiang, M F a

a SOOCHOW UNIVERSITY (China)

Author keywords

Ge doped ZnO films; Photoluminescence; Rf sputtering

Indexed keywords

ANNEALING; GERMANIUM; LIGHT EMISSION; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICA; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ANNEALING TEMPERATURE; GE DOPED ZNO FILMS; IONIC RADIUS; RF SPUTTERING;

SEMICONDUCTING FILMS;

EID: 17044429418 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.10.037 Document Type: Article

Times cited : (85)

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