Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

Physica Status Solidi (B) Basic Research

Volumn 250, Issue 2, 2013, Pages 283-290

  Schiavon, Dario ^a,b   Binder, Michael ^a,c   Peter, Matthias ^a   Galler, Bastian ^a   Drechsel, Philipp ^a   Scholz, Ferdinand ^b  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

ABC model; Charge carrier recombination; InGaN GaN; LED

Indexed keywords

CHARGE CARRIERS; CURVE FITTING; GREEN COMPUTING; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; SAPPHIRE;

ABC MODEL; AUGER RECOMBINATION; CHARGE CARRIER RECOMBINATION; DIFFERENTIAL CARRIER LIFETIMES; INGAN/GAN; SILICON SUBSTRATES; SINGLE QUANTUM WELL; THREADING DISLOCATION DENSITIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84873504216     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201248286     Document Type: Article

References (42)

1. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 23, L8 (1993).
2. Y. Narukawa, M. Ichikawa, D. Sanga, M. Sano, and T. Mukai, J. Phys. D, Appl. Phys. 43, 354002 (2010).
3. E. Taylor, P. R. Edwards, and R. W. Martin, Phys. Status Solidi A 209, 461 (2012).
4. M. T. Hardy, D. F. Feezell, S. P. DenBaars, and S. Nakamura, Mater. Today 14, 408 (2011).
5. Th. Gessmann and E. F. Schubert, J. Appl. Phys. 95, 2203 (2004).
6. J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, Appl. Phys. Lett. 95, 201113 (2009).
7. G.-B. Lin, D. Meyaard, J. Cho, E. F. Schubert, H. Shim, and C. Sone, Appl. Phys. Lett. 100, 161106 (2012).
8. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, Ü. Özgür, and H. Morkoç, Superlattices Microstruct. 48, 133 (2010).
9. W. Shockley and W. T. Read, Jr., Phys. Rev. 87, 835 (1952).
10. A. I. Zhmakin, Phys. Rep. 498, 189 (2011).
11. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys. 38, 3976 (1999).
12. J. Piprek, Phys. Status Solidi A 207, 2217 (2010).
13. A. Laubsch, M. Sabathil, W. Bergbauer, M. Strassburg, H. Lugauer, M. Peter, S. Lutgen, N. Linder, K. Streubel, J. Hader, J. V. Moloney, B. Pasenow, and S. W. Koch, Phys. Status Solidi C 6, S913 (2009).
14. A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, IEEE Trans. Electron Devices 57, 79 (2010).
15. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007).
16. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
17. J.-I. Shim, H. Kim, D.-S. Shin, and H.-Y. Yoo, J. Korean Phys. Soc. 58, 503 (2011).
18. J. Hader, J. V. Moloney, and S. W. Koch, Appl. Phys. Lett. 96, 221106 (2010).
19. A. David and N. F. Gardner, Appl. Phys. Lett. 97, 193508 (2010).
20. B. Galler, P. Drechsel, R. Monnard, P. Rode, P. Stauss, S. Froehlich, W. Bergbauer, M. Binder, M. Sabathil, B. Hahn, and J. Wagner, Appl. Phys. Lett. 101, 131111 (2012).
21. E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, Appl. Phys. Lett. 98, 161107 (2011).
22. A. David, M. J. Grundmann, J. F. Kaeding, N. F. Gardner, T. G. Mihopoulos, and M. R. Krames, Appl. Phys. Lett. 92, 53502 (2008).
23. M. Peter, A. Laubsch, W. Bergbauer, T. Meyer, M. Sabathil, J. Baur, and B. Hahn, Phys. Status Solidi A 6, 1125 (2009).
24. M. A. Moram and M. E. Vickers, Rep. Prog. Phys. 72, 36502 (2009).
25. B. Hahn, K. Engl, and M. Klein, Compound Semicond. 15, 25 (2009).
26. I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
27. C. van Opdorp and G. W't. Hooft, J. Appl. Phys. 52, 3827 (1981).
28. T. Meyer, M. Peter, J. Danhof, U. T. Schwarz, and B. Hahn, Phys. Status Solidi A 208, 1523 (2011).
29. S. Y. Karpov, Phys. Status Solidi RRL 4, 320 (2010).
30. H. Kim, D.-S. Shin, H.-Y. Ryu, and J.-I. Shim, Jpn. J. Appl. Phys. 49, 112402 (2010).
31. P. G. Eliseev, M. Osin'ski, H. Li, and I. V. Akimova, Appl. Phys. Lett. 75, 3838 (1999).
32. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, and A. Munkholm, Appl. Phys. Lett. 91, 141101 (2007).
33. M. Zhang, P. Bhattacharya, J. Singh, and J. Hinckley, Appl. Phys. Lett. 95, 201108 (2009).
34. M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, and B. Hahn, J. Appl. Phys. 106, 114508 (2009).
35. M. Brendel, A. Kruse, H. Jönen, L. Hoffmann, H. Bremers, U. Rossow, and A. Hangleiter, Appl. Phys. Lett. 99, 031106 (2011).
36. P. Drechsel, P. Stauss, W. Bergbauer, P. Rode, S. Fritze, A. Krost, T. Markurt, T. Schulz, M. Albrecht, H. Riechert, and U. Steegmüller, Phys. Status Solidi A 209, 427 (2012).
37. Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, and M. A. Banas, Appl. Phys. Lett. 94, 111109 (2009).
38. J. Danhof, H.-M. Solowan, U. T. Schwarz, A. Kaneta, Y. Kawakami, D. Schiavon, T. Meyer, and M. Peter, Phys. Status Solidi B 249, 480 (2012).
39. X. A. Cao, S. F. LeBoeuf, M. P. D'Evelyn, S. D. Arthur, J. Kretchmer, C. H. Yan, and Z. H. Yang, Appl. Phys. Lett. 84, 4313 (2004).
40. P. K. Basu, Theory of Optical Processes in Semiconductors - Bulk and Microstructures (Oxford Science Publications, Oxford, 2003), p. 283.
41. J. Hader, J. V. Moloney, B. Pasenow, S. W. Koch, M. Sabathil, N. Linder, and S. Lutgen, Appl. Phys. Lett. 92, 261103 (2008).
42. F. Bertazzi, M. Goano, and E. Bellotti, Appl. Phys. Lett. 97, 231118 (2010).