Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Galler, B ^a,b   Drechsel, P ^a   Monnard, R ^a   Rode, P ^a   Stauss, P ^a   Froehlich, S ^a   Bergbauer, W ^a   Binder, M ^a,b   Sabathil, M ^a   Hahn, B ^a   Wagner, J ^b  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; EMISSION WAVELENGTH; INGAN QUANTUM WELLS; JUNCTION TEMPERATURES; PRECISE DETERMINATIONS; RECOMBINATION COEFFICIENT; SILICON SUBSTRATES; SINGLE QUANTUM WELL;

LIGHT EMITTING DIODES;

AUGERS;

EID: 84872698263     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754688     Document Type: Article

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