An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed in-Rich Active Areas

Journal of the Korean Physical Society

Volumn 58, Issue 3, 2011, Pages 503-508

  Shim, Jong In ^a   Kim, Hyunsung ^a   Shin, Dong Soo ^a   Yoo, Han Youl ^b  

^a Hanyang University   (South Korea)

^b Inha University   (South Korea)

Author keywords

Efficiency droop; In rich area; Internal quantum efficiency; Light emitting diode; Radiative recombination rate

Indexed keywords

EID: 79952837747     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.58.503     Document Type: Article

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