Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates

Nanotechnology

Volumn 24, Issue 6, 2013, Pages

  Araki, Yoshiaki ^a   Yamaguchi, Masahito ^b   Ishikawa, Fumitaro ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ENGINEERING; CATHODOLUMINESCENCE IMAGES; CORE-SHELL-TYPE; CROSS-SECTIONAL STRUCTURES; DILUTE NITRIDES; GAAS; INTENSITY MODULATIONS; OVERPRESSURE; PEAK WAVELENGTH; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SI SUBSTRATES; SILICON (111) SUBSTRATES; SPECTRAL RED SHIFTS; VERTICAL ALIGNMENT; WIRE DIAMETER; WURTZITES; ZINC-BLENDE;

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NITRIDES; ZINC SULFIDE;

NANOWIRES;

EID: 84872893288     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/6/065601     Document Type: Article

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