Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Ishikawa, Fumitaro ^a,b   Guzmán, Álvaro ^a   Brandt, Oliver ^a   Trampert, Achim ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CIVIL AVIATION; GALLIUM; LIGHT EMISSION; LUMINESCENCE; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUENCHING; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

CARRIER LOCALIZATIONS; COMPARATIVE STUDIES; LINE SHAPES; LOCALIZED STATES; LOW TEMPERATURES; MATERIAL SYSTEMS; NONRADIATIVE CENTERS; PEAK ENERGIES; PHOTOLUMINESCENCE CHARACTERISTICS; QUANTUM WELLS; RADIATIVE LIFETIMES; RATE EQUATIONS; ROOM TEMPERATURES; TEMPERATURE DEPENDENCES;

QUANTUM EFFICIENCY;

EID: 58149264927     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3031652     Document Type: Article

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