MOVPE growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 231-235

  Onabe, K ^a   Aoki, D ^a   Wu, J ^a   Yaguchi, H ^b   Shiraki, Y ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS;

BAND GAP BOWING;

GALLIUM ALLOYS;

EID: 0033221994     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<231::AID-PSSA231>3.0.CO;2-9     Document Type: Article

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