Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy

Applied Physics Letters

Volumn 100, Issue 5, 2012, Pages

  Kuang, Y J ^a   Sukrittanon, S ^a   Li, H ^b   Tu, C W ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORE/SHELL; DENSITY RANGE; LOW ENERGIES; N CONTENT; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY IMAGE; SELF-CATALYZED; SI (1 1 1);

CATALYSIS; EPITAXIAL GROWTH; GALLIUM ALLOYS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SILICON;

GAS SOURCE MOLECULAR BEAM EPITAXY;

EID: 84863035256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681172     Document Type: Article

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