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Journal of Crystal Growth

Volumn 323, Issue 1, 2011, Pages 315-318

MBE-VLS growth of catalyst-free III-V axial heterostructure nanowires on (1 1 1)Si substrates

(3) Paek, Jihyun a Yamaguchi, Masahito a Amano, Hiroshi a

a NAGOYA UNIVERSITY (Japan)

Author keywords

Catalyst free; Heterostructure; Molecular beam epitaxy; Nanostructures; Nanowires; Semiconducting gallium arsenide

Indexed keywords

CATALYST-FREE; DIAMETER RATIO; FLUX RATIO; GAAS; HETEROSTRUCTURES; NANOWIRE DEVICES; OPTO-ELECTRONICS; SCANNING ELECTRON MICROSCOPY IMAGE; SI SUBSTRATES; THERMODYNAMIC CALCULATIONS;

CATALYSTS; DROPS; GALLIUM ARSENIDE; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

GALLIUM ALLOYS;

EID: 79957981516 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.124 Document Type: Article

Times cited : (18)

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