High-density GaAs integrated circuit manufacturing

IEEE Transactions on Semiconductor Manufacturing

Volumn 16, Issue 3, 2003, Pages 384-389

  Mikkelson, James M ^a   Tomasetta, Louis R ^a  

^a Vitesse Semiconductor Corporation   (United States)

Author keywords

Enhancement depletion (E D) MESFETs; GaAs ICs; GaAs VLSI; Self aligned refractory gate

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; VLSI CIRCUITS;

HIGH-DENSITY INTEGRATED CIRCUIT MANUFACTURING; SCHOTTKY GATE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0042386766     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2003.815630     Document Type: Article

References (8)

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