Enhancement-mode metal-semiconductor field-effect transistors based on single n-CdS nanowires

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Ma, R M ^a   Dai, L ^a   Qin, G G ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; NANOWIRES; TRANSCONDUCTANCE;

ENHANCEMENT MODE; SCHOTTKY GATE VOLTAGE (VG); SINGLE NANOWIRES (NWS); ZERO BIAS;

MESFET DEVICES;

EID: 33847640088     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2710004     Document Type: Article

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