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Volumn 2, Issue , 2000, Pages 651-652
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Self-consistent simulation and analysis of InGaN/GaN lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND STRUCTURE;
CARRIER CONCENTRATION;
COMPUTER SIMULATION;
CONTINUOUS WAVE LASERS;
CURRENT DENSITY;
ELECTRON TRANSPORT PROPERTIES;
FERMI LEVEL;
HIGH POWER LASERS;
LEAKAGE CURRENTS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
THERMIONIC EMISSION;
AUGER RECOMBINATION;
DEFECT RECOMBINATION;
FABRY-PEROT LASER;
INDIUM GALLIUM NITRIDE;
LATERAL CURRENT SPREADING;
NITRIDE LASER;
NON LORENTZIAN LINE BROADENING MODEL;
PIEZOELECTRIC FIELD;
SELF CONSISTENT SIMULATION;
VERTICAL CARRIER LEAKAGE;
SEMICONDUCTOR LASERS;
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EID: 0034481732
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (2)
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References (2)
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