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Applied Physics Letters

Volumn 99, Issue 8, 2011, Pages

Investigation of fast and slow decays in InGaN/GaN quantum wells

(7) Sun, Guan a Xu, Guibao a Ding, Yujie J a Zhao, Hongping a,b Liu, Guangyu a Zhang, Jing a Tansu, Nelson a

a Lehigh University (United States)

b Case Western Reserve University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; INGAN/GAN; INGAN/GAN QUANTUM WELL; LOCALIZED STATE; PHOTOGENERATED CARRIERS; PHOTOLUMINESCENCE SPECTRUM; PUMP-PROBE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; TIME-RESOLVED;

PHOTOLUMINESCENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 80052417863 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3627166 Document Type: Article

Times cited : (53)

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