Study of laser threshold temperature sensitivity in optically pumped GaN epilayers

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 479-482

  Ryabtsev, A G ^a   Lutsenko, E V ^a   Ryabtsev, G I ^a   Yablonskii, G P ^a   Smal, A S ^b   Schineller, B ^c   Heuken, M ^c  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b BREST STATE TECHNICAL UNIVERSITY   (Belarus)

^c AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; EMISSION SPECTROSCOPY; EPILAYERS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; PUMPING (LASER); SEMICONDUCTOR LASERS; SPONTANEOUS EMISSION; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

INTERNAL QUANTUM EFFICIENCY; LASER THRESHOLD; NONRADIATIVE RECOMBINATION RATES; OPTICALLY PUMPED; RECOMBINATION RATE; SPONTANEOUS EMISSION SPECTRUM; TEMPERATURE DEPENDENCIES; TEMPERATURE INTERVALS;

OPTICALLY PUMPED LASERS;

EID: 39749163203     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390092     Document Type: Conference Paper

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