Electrical spin injection in p-type Si using Fe/MgO contacts

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8461, Issue , 2012, Pages

  Spiesser, A ^a   Sharma, S ^a,b   Saito, H ^a   Jansen, R ^a   Yuasa, S ^a   Ando, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

Bias dependence; Electrical spin injection; Epitaxial Fe MgO tunnel contact; Hanle measurement; Silicon; Spin accumulation; Spin lifetime; Spintronics

Indexed keywords

BIAS DEPENDENCE; ELECTRICAL SPIN INJECTION; SPIN LIFETIMES; SPIN-ACCUMULATIONS; TUNNEL CONTACTS;

ELECTRON TRANSPORT PROPERTIES; MAGNETOELECTRONICS; NANOTECHNOLOGY; SILICON; SPIN POLARIZATION; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 84872104499     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.930839     Document Type: Conference Paper

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