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Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 2, 2012, Pages

Effect of MgO barrier insertion on spin-dependent transport properties of CoFe/n-GaAs heterojunctions

(5) Akiho, Takafumi a Uemura, Tetsuya a Harada, Masanobu a Matsuda, Ken Ichi a Yamamoto, Masafumi a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL PINNING; MGO BARRIER; NONLOCAL; SCHOTTKY BARRIER HEIGHTS; SIGNAL AMPLITUDE; SPIN-DEPENDENT TRANSPORT PROPERTIES; SPIN-VALVES; TUNNELING ANISOTROPIC MAGNETORESISTANCES;

ELECTRIC RESISTANCE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM; TRANSPORT PROPERTIES;

GALLIUM ARSENIDE;

EID: 84857475751 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.02BM01 Document Type: Article

Times cited : (10)

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