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As was discussed previous papers on Fe/GaAs and Fe/ZnSe (Refs.) the polarization at k =0 may be less than 100%, because the point group rotational symmetry around the [001] axis is C4v for Fe but C2v for the zinc-blende or diamond structure. Thus, minority-spin Fe states of Δ 2′ symmetry (dxy character) at EF can weakly couple to semiconductor states of Δ1 symmetry. This weak coupling was found (Ref.) to result in resonant interface states penetrating the Schottky barrier, which under certain conditions reduced P Γ̄ by 10-20%. Such a strong contribution from interface states is not observed in Fe/Si(001).
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As was discussed previous papers on Fe/GaAs and Fe/ZnSe (Refs.) the polarization at k =0 may be less than 100%, because the point group rotational symmetry around the [001] axis is C4v for Fe but C2v for the zinc-blende or diamond structure. Thus, minority-spin Fe states of Δ 2′ symmetry (dxy character) at EF can weakly couple to semiconductor states of Δ1 symmetry. This weak coupling was found (Ref.) to result in resonant interface states penetrating the Schottky barrier, which under certain conditions reduced P Γ̄ by 10-20%. Such a strong contribution from interface states is not observed in Fe/Si(001).
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Such strain is experimentally feasible, and has the additional advantage of achieving improved mobility. See, e.g., APPLAB 0003-6951 10.1063/1.2431702
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