Electrical creation of spin accumulation in p-type germanium

Solid State Communications

Volumn 151, Issue 17, 2011, Pages 1159-1161

  Saito, H ^a   Watanabe, S ^a,b   Mineno, Y ^a,c   Sharma, S ^a   Jansen, R ^a   Yuasa, S ^a   Ando, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c TOHO UNIVERSITY   (Japan)

Author keywords

A. Heterojunctions; A. Magnetic films and multilayers; A. Semiconductor; D. Electronic transport

Indexed keywords

A. HETEROJUNCTIONS; A. MAGNETIC FILMS AND MULTILAYERS; A. SEMICONDUCTOR; D. ELECTRONIC TRANSPORT; DIFFUSION MODEL; HANLE EFFECTS; INTERFACE STATE; P-TYPE; SCHOTTKY BARRIERS; SPIN INJECTION; SPIN-ACCUMULATIONS;

HETEROJUNCTIONS; MAGNETIC MULTILAYERS; SCHOTTKY BARRIER DIODES;

GERMANIUM;

EID: 79960718155     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.05.010     Document Type: Article

References (30)

1. S. Datta, and B. Das Appl. Phys. Lett. 56 1990 665
2. S. Sugahara, and M. Tanaka Appl. Phys. Lett. 84 2004 2307
3. X. Lou, C. Adelmann, M. Furis, S.A. Crooker, C.J. Plamstrøm, and P.A. Crowell Phys. Rev. Lett. 96 2006 176603
4. M. Tran, H. Jaffrs, C. Deranlot, J.-M. George, A. Fert, A. Miard, and A. Lematre Phys. Rev. Lett. 102 2009 036601
5. M. Ciorga, A. Einwanger, U. Wurstbauer, D. Schuh, W. Wegscheider, and D. Weiss Phys. Rev. B 79 2009 165321
6. T. Inokuchi, T. Marukame, Z. Ishikawa, H. Sugiyama, and Y. Saito Appl. Phys. Express 2 2009 023006
7. O.M. van't Erve, A.T. Hanbicki, M. Holub, C.H. Li, C. Awo-Affouda, P.E. Thompson, and B.T. Jonker Appl. Phys. Lett. 91 2007 212109
8. I. Appelbaum, B. Huang, and D. Monsma Nature 447 2007 295
9. S.P. Dash, S. Sharma, R.S. Patel, M.P. de Jong, and R. Jansen Nature 462 2009 491
10. T. Sasaki, T. Oikawa, T. Suzuki, M. Shiraishi, Y. Suzuki, and K. Tagami Appl. Phys. Express 2 2009 053003
11. Y. Ando, K. Hayama, K. Kasahara, K. Kishi, K. Ueda, K. Sawano, T. Sadoh, and M. Miyao Appl. Phys. Lett. 94 2009 182105
12. T. Nishimura, K. Kita, and A. Toriumim Appl. Phys. Express 1 2008 051406
13. Y. Zhou, M. Ogawa, X. Han, and K.L. Wang Appl. Phys. Lett. 93 2008 202105
14. D. Lee, S. Raghunathan, R.J. Wilson, D.E. Nikonov, K. Saraswat, and S.X. Wang Appl. Phys. Lett. 96 2010 052514
15. K.R. Jeon, B.C. Min, H.S. Lee, I.J. Shin, C.Y. Park, and S.C. Shin Appl. Phys. Lett. 97 2010 022105
16. M. Cantoni, D. Petti, C. Rinaldi, and R. Bertacco Appl. Phys. Lett. 98 2011 032104
17. C. Shen, T. Trypiniotis, K.Y. Lee, S.N. Holmes, R. Mansell, M. Husain, V. Shah, X.V. Li, H. Kurebayashi, I. Farrer, C.H. de Groot, D.R. Leadley, G. Bell, E.H.C. Parker, T. Whall, D.A. Ritchie, and C.H.W. Barnes Appl. Phys. Lett. 97 2010 162104
18. Y. Zhou, W. Han, L.-T. Chang, F. Xiu, M. Wang, M. Oehme, I.A. Fischer, J. Schulze, R.K. Kawakami, K.L. Wang, http://arxiv.org/abs/1103.5095.
19. K. Hamaya, Y. Ando, T. Sadoh, and M. Miyao Jpn. J. Appl. Phys. 50 2011 010101
20. A. Fert, and H. Jaffrs Phys. Rev. B 64 2001 184420
21. F.J. Jedema, H.B. Heersche, A.T. Filip, J.J.A. Baselmans, and B.J. van Wees Nature 416 2002 713
22. C. Gould, C. Rster, T. Jungwirth, E. Girgis, G.M. Schott, R. Giraud, K. Brunner, G. Schmidt, and L.W. Molenkamp Phys. Rev. Lett. 93 2004 117203
23. H. Saito, S. Yuasa, and K. Ando Phys. Rev. Lett. 95 2005 086604
24. J. Monser, A. Matos-Abiaque, D. Schuh, W. Wegscheider, J. Fabian, and D. Weiss Phys. Rev. Lett. 99 2007 056601
25. L. Gao, X. Jiang, S.H. Yang, J.D. Burton, E.Y. Tsymbal, and S.S.P. Parkin Phys. Rev. Lett. 99 2007 226602
26. T. Umemura, M. Harada, K. Matsuda, and M. Yamamoto Appl. Phys. Lett. 96 2010 252106
27. S.M. Sze Physics of Semiconductor Devices second ed. 1981 Wiley New York
28. S.P. Dash, S. Sharma, J.C. Le Breton, H. Jaffrs, J. Peiro, J.-M. George, A. Lematre, R. Jansen, http://arxiv.org/abs/1101.1691.
29. J.C. Hensel Phys. Rev. Lett. 21 1968 983
30. P 2) ] for the observed MR ratio yielded P of 0.6.