Electric-field control of spin accumulation signals in silicon at room temperature

Applied Physics Letters

Volumn 99, Issue 13, 2011, Pages

  Ando, Y ^a   Maeda, Y ^a   Kasahara, K ^a   Yamada, S ^a   Masaki, K ^a   Hoshi, Y ^b   Sawano, K ^b   Izunome, K ^c   Sakai, A ^d   Miyao, M ^a   Hamaya, K ^a,e  

^a KYUSHU UNIVERSITY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c Covalent Silicon Corporation   (Japan)

^d OSAKA UNIVERSITY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; ELECTRIC-FIELD CONTROL; GATE STRUCTURE; GATE VOLTAGES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; ROOM TEMPERATURE; SI-BASED; SPIN INJECTION; SPIN SIGNAL; SPIN-ACCUMULATIONS; SPINTRONIC APPLICATIONS;

ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SEMICONDUCTING SILICON;

EID: 80053544497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3643141     Document Type: Article

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