Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100)

Physical Review Letters

Volumn 94, Issue 5, 2005, Pages

  Jiang, X ^a,b   Wang, R ^a,b   Shelby, R M ^a   Macfarlane, R M ^a   Bank, S R ^b   Harris, J S ^b   Parkin, S S P ^a  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENT POLARIZATION; QUANTUM WELL DETECTORS; SPIN POLARIZATION; TUNNELING SPIN POLARIZATION (TSP);

ELECTROLUMINESCENCE; FERROMAGNETIC MATERIALS; LIGHT EMITTING DIODES; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 18144371161     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.056601     Document Type: Article

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