Electrical spin injection into moderately doped silicon enabled by tailored interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 82, Issue 24, 2010, Pages

  Jansen, R ^a   Min, B C ^a,b   Dash, S P ^a   Sharma, S ^a   Kioseoglou, G ^c,d   Hanbicki, A T ^c   Van 'T Erve, O M J ^c   Thompson, P E ^c   Jonker, B T ^c  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b Korea Institute of Science and Technology   (South Korea)

^c NAVAL RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF CRETE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 78651251992     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.241305     Document Type: Article

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34. As in Ref., the quoted lifetime is a lower limit. A comparison of spin lifetimes for different doping concentrations is only possible if any sources of artificial broadening of the Hanle curve are taken into account. This will be discussed elsewhere.
35. A detailed discussion of the amplitude of the Hanle signal for different ferromagnets, and a comparion with previous results of Ref. on heavily doped Si, is beyond the scope of this work and will be presented elsewhere.