Spin injection and detection between CoFe/AlO x junctions and SOI investigated by Hanle effect measurements

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Inokuchi, Tomoaki ^a   Ishikawa, Mizue ^a   Sugiyama, Hideyuki ^a   Saito, Yoshiaki ^a   Tezuka, Nobuki ^b  

^a TOSHIBA CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; HANLE EFFECTS; OXIDATION CONDITIONS; ROOM TEMPERATURE; SI-ON-INSULATOR; SPIN INJECTION; TRANSMISSION ELECTRON MICROSCOPE; TUNNEL BARRIER;

OXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

COBALT;

EID: 84861729733     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3677930     Document Type: Conference Paper

References (16)

1. S. Sugahara and M. Tanaka, ACM Trans. Storage 2, 197 (2006). 10.1145/1149976.1149980
2. T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, and Y. Saito, IEDM Tech. Dig. 215 (2009).
3. T. Inokuchi, T. Marukame, T. Tanamoto, H. Sugiyama, M. Ishikawa, and Y. Saito, Symp. VLSI Tech. 119 (2010).
4. Y. Saito, T. Marukame, T. Inokuchi, M. Ishikawa, H. Sugiyama, and T. Tanamoto, Thin Solid Films 519, 8266 (2011). 10.1016/j.tsf.2011.03.073
5. G. Schmidt, D. Ferrand, L. W. Molenkamp, A. T. Filip, and B. J. van Wees, Phys. Rev. B 62, R4790 (2000). 10.1103/PhysRevB.62.R4790
6. E. I. Rashba, Phys. Rev. B 62, R16267 (2000). 10.1103/PhysRevB.62.R16267
7. A. Fert and H. Jaffrs, Phys. Rev. B 64, 184420 (2001). 10.1103/PhysRevB.64.184420
8. O. M. J. van't Erve, A. T. Hanbicki, M. Holub, C. H. Li, C. Awo-Affouda, P. E. Thompson, and B. T. Jonker, Appl. Phys. Lett. 91, 212109 (2007). 10.1063/1.2817747
9. G. Kioseoglou, A. T. Hanbicki, R. Goswami, O. M. J. van t Erve, C. H. Li, G. Spanos, P. E. Thompson, and B. T. Jonker, Appl. Phys. Lett. 94, 122106 (2009). 10.1063/1.3099049
10. S. P. Dash, S. Sharma, R. S. Patel, M. P. de Jong, and R. Jansen, Nature 462, 491 (2009). 10.1038/nature08570
11. T. Sasaki, T. Oikawa, M. Shiraishi, Y. Suzuki, and K. Noguchi, Appl. Phys. Lett. 98, 012508 (2011). 10.1063/1.3536488
12. T. Sasaki, T. Oikawa, T. Suzuki, M. Shiraishi, Y. Suzuki, and K. Noguchi, Appl. Phys. Lett. 98, 262503 (2011). 10.1063/1.3604010
13. Y. Ando, K. Kasahara, K. Yamane, Y. Baba, Y. Maeda, Y. Hoshi, K. Sawano, M. Miyao, and K. Hamaya, Appl. Phys. Lett. 99, 012113 (2011). 10.1063/1.3607480
14. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
15. F. J. Jedema, H. B. Heersche, A. T. Filip, J. J. A. Baselmans, and B. J. van Wees, Nature 416, 713 (2002). 10.1038/416713a
16. M. Tran, H. Jaffrs, C. Deranlot, J.-M. George, A. Fert, A. Miard, and A. Lematre, Phys. Rev. Lett. 102, 036601 (2009). 10.1103/PhysRevLett.102.036601