Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy

Applied Physics Letters

Volumn 93, Issue 14, 2008, Pages

  Miao, G X ^a   Chang, J Y ^a,b   Van Veenhuizen, M J ^a   Thiel, K ^c   Seibt, M ^c   Eilers, G ^c   Munzenberg M ^c   Moodera, J S ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Korea Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL GROWTH; CRYSTAL GROWTH; GRAIN BOUNDARIES; MAGNETIC DEVICES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WIRES; SILICON; TUNNEL JUNCTIONS; TUNNELS; WAVEGUIDE JUNCTIONS;

COMPRESSIVE STRAINS; DIRECT EPITAXIAL GROWTH; FERROMAGNETS; FILTERING EFFECTS; MAGNETIC TUNNEL JUNCTIONS; SHARP CONTRAST; SMALL-ANGLE GRAIN BOUNDARIES; TRANSPORT CHARACTERISTICS;

EPITAXIAL GROWTH;

EID: 53649089119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2999633     Document Type: Article

References (27)

1. W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren, Phys. Rev. B 63, 054416 (2001).
2. J. Mathon and A. Umerski, Phys. Rev. B 63, 220403 (R) (2001).
3. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, Nature Mater. 3, 868 (2004).
4. S. Yuasa, A. Fukushima, H. Kubota, Y. Suzuki, and K. Ando, Appl. Phys. Lett. 89, 042505 (2006).
5. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S. H. Yang, Nature Mater. 3, 862 (2004).
6. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 90, 212507 (2007).
7. J. C. Le Breton, S. Le Gall, G. J́źquel, B. Ĺpine, P. Schieffer, and P. Turban, Appl. Phys. Lett. 91, 172112 (2008).
8. F. Magnus, S. K. Clowes, A. M. Gilbertson, W. R. Branford, E. D. Barkhoudarov, L. F. Cohen, L. J. Singh, Z. H. Barber, M. G. Blamire, P. D. Buckle, L. Buckle, and T. Ashley, Appl. Phys. Lett. 91, 122106 (2008).
9. X. Jiang, R. Wang, R. M. Shelby, and S. S. P. Parkin, IBM J. Res. Dev. 50, 111 (2006).
10. G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris, Appl. Phys. Lett. 87, 262503 (2005).
11. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, Phys. Rev. Lett. 94, 056601 (2005).
12. A. K. Sharma, A. Kvit, and J. Narayan, J. Vac. Sci. Technol. A 17, 3393 (1999).
13. F. Niu, B. H. Hoerman, and B. W. Wessels, J. Vac. Sci. Technol. B 18, 2146 (2000).
14. F. Niu, A. Meier, and B. W. Wessels, J. Electroceram. 13, 149 (2004).
15. D. K. Fork, F. A. Ponce, J. C. Tramontana, and T. H. Geballe, Appl. Phys. Lett. 58, 2294 (1991).
16. P. A. Stampe and R. J. Kennedy, Thin Solid Films 326, 63 (1998).
17. T. Yamada, N. Wakiya, K. Shinozaki, and N. Mizutani, Key Eng. Mater. 253, 119 (2003).
18. C. M. Boubeta, A. Cebollada, J. F. Calleja, C. Contreras, F. Peiró, and A. Cornet, J. Appl. Phys. 93, 2126 (2003).
19. M. Ning, Y. Y. Mi, C. K. Ong, P. C. Lim, and S. J. Wang, J. Phys. D: Appl. Phys. 40, 3678 (2007).
20. Y. Li, G. Xiong, G. Lian, J. Li, and Z. Gan, Thin Solid Films 223, 11 (1993).
21. S. Kaneko, H. Funakubo, T. Kadowaki, Y. Hirabayashi, and K. Akiyama, Europhys. Lett. 81, 46001 (2008).
22. L. D. Chang, M. Z. Tseng, E. L. Hu, and D. K. Fork, Appl. Phys. Lett. 60, 1753 (1992).
23. L. S. Hung, L. R. Zheng, and T. N. Blanton, Appl. Phys. Lett. 60, 3129 (1992).
24. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. B 14, 2297 (1996).
25. W. H. Butler, X.-G. Zhang, X. D. Wang, J. van Ek, and J. M. MacLaren, J. Appl. Phys. 81, 5518 (1997).
26. G. X. Miao, Y. J. Park, J. S. Moodera, M. Seibt, G. Eilers, and M. Münzenberg, Phys. Rev. Lett. 100, 246803 (2008).
27. V. Srikant, J. S. Speck, and D. R. Clarke, J. Appl. Phys. 82, 4286 (1997).