Spin accumulation and spin lifetime in p-type germanium at room temperature

Applied Physics Express

Volumn 5, Issue 5, 2012, Pages

  Iba, Satoshi ^a   Saito, Hidekazu ^a   Spiesser, Aurelie ^a   Watanabe, Suguru ^b   Jansen, Ron ^a   Yuasa, Shinji ^a   Ando, Koji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; MOMENTUM RELAXATION; P-TYPE; ROOM TEMPERATURE; SPIN LIFETIMES; SPIN SIGNAL; SPIN-ACCUMULATIONS; SPIN-DIFFUSION LENGTH; SPIN-POLARIZED TUNNELING; TUNNEL CURRENTS;

FIELD EFFECT TRANSISTORS;

GERMANIUM;

EID: 84861378625     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.053004     Document Type: Article

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