Growth mechanism of MgO film on Si (100): Domain matching epitaxy, strain relaxation, preferred orientation formation

Crystal Growth and Design

Volumn 10, Issue 12, 2010, Pages 5200-5204

  Yu, Hak Ki ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC PROPERTY; CRITICAL THICKNESS; DOMAIN MATCHING; DOMAIN MATCHING EPITAXY; ENERGY MODEL; GROWTH MECHANISMS; IONIC BONDING; LARGE LATTICE MISMATCH; MGO FILMS; POLAR SURFACES; PREFERRED ORIENTATIONS; SI(1 0 0); STICKING PROBABILITY; THEORETICAL MODELING;

EPITAXIAL GROWTH; LATTICE MISMATCH; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRAIN RELAXATION;

FILM GROWTH;

EID: 78649937334     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg101001e     Document Type: Article

References (32)

1. Zhu, W.; Cheng, J.; Yu, S.; Gong, J.; Meng, Z. Appl. Phys. Lett. 2007, 90, 032907
2. Kang, B. S.; Lee, J. -S.; Stan, L.; Lee, J. -K.; Depaula, R. F.; Arendt, P. N.; Nastasi, M.; Jia, Q. X. Appl. Phys. Lett. 2004, 85, 4702
3. Basit, N. A.; Kim, H. K.; Blachere, J. Appl. Phys. Lett. 1998, 73, 3941
4. Fork, D. K.; Ponce, F. A.; Tramontana, J. C.; Geballe, T. H. Appl. Phys. Lett. 1991, 58, 2294
5. Erven, A. J. M.; Kim, T. H.; Muenzenberg, M.; Moodera, J. S. Appl. Phys. Lett. 2002, 81, 4982
6. Ning, M.; Li, J.; Ong, C. K.; Wang, S. J. J. Appl. Phys. 2008, 103, 013911
7. Wang, W.; Sukegawa, H.; Shan, R.; Inomata, K. Appl. Phys. Lett. 2008, 93, 182504
8. Boubeta, C. M.; Cebollada, A.; Calleja, J. F.; Contreras, C.; Peiro, F.; Cornet, A. J. Appl. Phys. 2003, 93, 2126
9. Reisinger, D.; Schonecke, M.; Brenninger, T.; Opel, M.; Erb, A.; Alff, L.; Gross, R. J. Appl. Phys. 2003, 94, 1857
10. Lee, S. S.; Lee, S. Y.; Hyun, J. S.; Kim, C. G.; Kim, Y. Chem. Vap. Deposition 2002, 8, 257
11. Niu, F.; Meier, A. L.; Wessels, B. W. J. Vac. Sci. Technol. B 2006, 24, 2586
12. Lee, H. N.; Senz, S.; Pignolet, A.; Hesse, D. Appl. Phys. Lett. 2001, 78, 2922
13. Mathews, J. W.; Blakeslee, A. E. J. Cryst. Growth 1974, 27, 188
14. Narayan, J.; Larson, B. C. J. Appl. Phys. 2003, 93, 278
15. Liu, W.-R.; Li, Y.-H.; Hsieh, W. F.; Hsu, C.-H.; Lee, W. C.; Lee, Y. J.; Hong, M.; Kwo, J. Cryst. Growth Des. 2009, 9, 239
16. Narayan, J.; Tiwari, P.; Chen, X.; Chowdhury, R.; Zheleva, T. Appl. Phys. Lett. 1992, 61, 1290
17. Grandjean, N.; Massies, J.; Vennegues, P.; Laugt, M.; Leroux, M. Appl. Phys. Lett. 1997, 70, 643
18. Miao, G. X.; Chang, J. Y; Veenhuizen, M. J.; Thiel, K.; Seibt, M.; Eilers, G.; Munzenberg, M.; Moodera, J. S. Appl. Phys. Lett. 2008, 93, 142511
19. Gall, D.; Kodambaka, S.; Wall, M. A.; Petrov, I.; Greene, J. E. J. Appl. Phys. 2003, 93, 9086
20. Mahieu, S.; Ghekiere, P.; Depla, D.; Gryse, R. D. Thin Solid Films 2006, 515, 1229
21. Patsalas, P.; Gravalidis, C.; Logothetidis, S. J. Appl. Phys. 2004, 96, 6234
22. Pelleg, J.; Zevin, L. Z.; Lungo, S.; Croitoru, N. Thin Solid Films 1991, 197, 117
23. Greene, J. E.; Sundgren, J.-E.; Hultman, L.; Petrov, I.; Bergstrom, D. B. Appl. Phys. Lett. 1995, 67, 2928
24. Liu, X.-Y.; Bennema, P. Phys. Rev. B 1996, 53, 2314
25. JCPDS Card No. 45-0946.
26. Goniakowski, J.; Finocchi, F.; Noguera, C. Rep. Prog. Phys. 2008, 71, 016501
27. Wolf, D. Phys. Rev. Lett. 1992, 68, 3315
28. Bruno, M.; Aquilano, D.; Prencipe, M. Cryst. Growth Des. 2009, 9, 1912
29. Tasker, P. W. J. J. Phys. C: Solid State Phys. 1979, 12, 4977
30. Wander, A.; Bush, I. J.; Harrison, N. M. Phys. Rev. B 2003, 68, 233405
31. Zheleva, T.; Jagannadham, K.; Narayan, J. J. Appl. Phys. 1994, 75, 860
32. Pojani, A.; Finocchi, F.; Goniakowski, J.; Noguera, C. Surf. Sci. 1997, 387, 354