Effects of the oxygen vacancy concentration in InGaZnO-based resistance random access memory

Applied Physics Letters

Volumn 101, Issue 24, 2012, Pages

  Kim, Moon Seok ^a   Hwan Hwang, Young ^a   Kim, Sungho ^a   Guo, Zheng ^a   Moon, Dong Il ^a   Choi, Ji Min ^a   Seol, Myeong Lok ^a   Bae, Byeong Soo ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; OPTIMAL VALUES; OXYGEN VACANCY CONCENTRATION; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; STOICHIOMETRIC RATIO; ZNO;

ALUMINUM; OXYGEN VACANCIES; ZINC OXIDE;

GALLIUM;

EID: 84871305008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4770073     Document Type: Article

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